The failure mechanisms of LEDs are divided into three categories: the semiconductors, interconnects and the package. Semiconductor-related failure mechanisms include defect and dislocation generation and movement, die cracking, dopant diffusion and electromigration. Interconnect-related failure mechanisms are electrical overstress-induced bond wire fracture and wire ball bond fatigue, electrical contact metallurgical interdiffusion and electrostatic discharge. Package-related failure mechanisms include carbonization of the encapsulant, delamination, encapsulant yellowing, lens cracking, phosphor thermal quenching and solder joint fatigue. This section discusses the various failure mechanisms of LEDs.

Bases on research performed by CALCE, we lay the foundation for such an understanding. Following tables summarize the relationships between various failure sites and the associated causes, effects on devices, failure modes and failure mechanisms. However new research and field experience with LEDs is necessary to develop improved understanding to further update the inter-relationships.