View Presentation

View Recorded Presentation

Abstract

The state-of-the-art power switching devices made from SiC and GaN semiconductors contain a high density of crystal defects. Most of these defects are present in starting wafers and some are generated during device processing. There is little conclusive evidence so far on the exact role that the crystal defects play on device performance, manufacturing yield, and more importantly, long-term field-reliability especially when devices are operating under extreme stressful environments. This webinar will provide a review of the current state-of-the-art of SiC and GaN power semiconductor material technology, and the potential impact crystal defects may have on high-density power switching electronics. A review of silicon technology development and manufacturing evolution is made to draw a parallel between silicon and wide bandgap (WBG) semiconductor power electronics. Finally, the bottlenecks which must be overcome in order to achieve high reliability power switching device technologies will be discussed. About Presenter:.

About the Presenter: Dr. Christou has more than 150 publications in archival journals and 14 patents (including two pending), and has organized international conferences in GaAs devices, materials and reliability. Dr. Christou is a Fellow of the IEEE, a Fullbright Fellow, a recipient of the DoD-Berman Publication Awards, and an IEEE Guest Lecturer. Professor Christou was the 2004 recipient of the INEER Achievement Award (International Network for Engineering Education and Research) for achievements in international education and research in engineering, as well as the recipient of the 2007 ASM International Burgess Memorial Award "For his seminal scientific contributions in the field of electronic materials, packaging and devices." Professor Christou is a member of APS, ASM, TMS and MRS, was the past President of the Federation of Materials Societies from 2004-6, and is presently a member of the FMS Board of Trustees.