Failure Modes and Effects Criticality Analysis (FMECA) of AlGaN/GaN Based Microwave Device Degradation Mechanisms

CS Mantech Conference, 16-19 May, 2011, Palm Springs, CA

Failure Modes and Effects Criticality Analysis (FMECA) of AlGaN/GaN Based Microwave Device Degradation Mechanisms

Zahra Mohagegh¹, Mohammed Modarres¹, and Aris Christou¹
¹University of Maryland, Department of Mechanical Engineering, College Park, MD, 20740, USA

Abstract:

This paper reviews the main degradation mechanisms of GaN-based HEMTs (High Electron Mobility Transistors) based on surfaces, interfaces, substrate and technology issues. Failure Mode and Effects Analysis is proposed as a powerful design assurance technique to identify and minimize potential problems in a process design. The product of an FMECA is a table of information which summarizes the analysis of all possible failure modes.

This article is available to CALCE Consortium Members for personal review.