Untitled Document

INTRODUCTION

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, "Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting", Journal of Display Technology, vol. 3, no. 2, pp. 160-175, 2007.
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with Solid State Lighting Technology", IEEE Journal on Selected Topics in Quantum Electronics, vol. 2, pp. 310-320, 2002.
F. M. Steranka, J. Bhat, D. Collins, L. Cook, M. G. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach , S. Rudaz, Y. C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, "High Power LEDs - Technology Status and Market Applications," Physica Status Solidi (a), vol. 194, pp. 380-388, 2002.
E. F. Schubert, J. K. Kim, H. Luo, and J. -Q. Xi, "Solid-State Lighting-a Benevolent Technology", Reports on Progress in Physics, vol. 69, pp. 3069-3099, 2006
Y. Aoyama and T. Yachi, "An LED Module Array System Designed for Streetlight Use", Energy 2030 Conference, 2008. Energy 2008. IEEE, pp. 1-5, 2008.
R. Vittori and A. Scaburri, "New Solid State Technologies and Light Emission diodes as a Mean of Control and Lighting Source Applicable to Explosion Proof Equipment, With the Scope to Reduce Maintenance, to Limit the Risk of Bad Maintenance and to Expand the Plants' Life", PCIC Europe, 2009. PCIC EUROPE ΄09. Conference Record, pp. 193-198, 2009.
M. King, "Characteristics of High Brightness LEDs", Electronic Design Online Conference Series, session 5, pp. 1-16, Jun 22nd, 2010.
M. –S. Huang, C. –C. Hung, Y. –C. Fang, W. –C. Lai, and Y. –L. Chen, "Optical Design and Optimization of Light Emitting Diode Automotive Head Light with Digital Micromirror Device Light Emitting Diode", Optik, International Journal for Light and Electron Optics, pp. 1-9, 2009.
S. W. R. Lee, C. H. Lau, S. P. Chan, K. Y. Ma, M. H. NG, Y. W. NG, K. H. LEE, and J. C. C. Lo, "Development and Prototyping of a HB-LED Array Module for Indoor Solid State Lighting", High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP΄06. Conference, pp. 141-145, 2006.
R. Peon, G. Doluweera, I. Platonova, D. Irvine-Halliday, and G. Irvine-Halliday, "Solid State Lighting For The Developing World – The Only Solution", Optics & Photonics 2005, Proceedings of SPIE, vol. 5941, pp. 109-123, San Diego, 2005.
R. A. Pinto, M. R. Cosetin, M. F. da Silva, G. W. Denardin, J. Fraytag, A. Campos, and R. N. do Prado, "Compact Emergency Lamp Using Power LEDs", Industrial Electronics, 2009. IECON ΄09. 35th Annual Conference of IEEE, pp. 3494-3499, 2009.
S. –I. Shibata, T. Oyabu, and Haruhiko Kimura, "Bioelectric Potential Characteristic of Pothos under Light Emitting Diode", ICCAS-SICE, pp. 4663-4668, 2009.
T. Wipiejewski, T. Moriarty, V. Hung, P. Doyle, G. Duggan, D. Barrow, B. McGarvey, M. O'Gorman, T. Calvert, M. Maute, V. Gerhardt, J. D. Lambkin, "Gigabits in the Home with Plugless Plastic Optical Fiber (POF) Interconnects", Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd, pp. 1263-1266, 2008.
Y. N. Chang, C. C. Hung, and S. C. Tung, "Auto Mixed Light for RGB LED Backlight Module", Industrial Electronics, 2009. ISIE 2009. IEEE International Symposium, pp. 864-869, 2009.
S. W. Chang, "LED Lighting: High Efficiency and Environmental Benefit" Samsung Economic Research Institute Economic Focus, vol. 206, pp. 1-10, 2008.

LED RELIABILITY

N. Narendran, L. Deng, R. M .Pysar, Y. Gu, and H. Yu, "Performance Characteristics of High-Power Light-Emitting Diodes", Third International Conference on Solid State Lighting, Proceedings of SPIE, vol. 5187, no. 267, pp. 267-275, 2004.
IES (Illuminating Engineering Society), IES LM-80-08, "Approved Method: Measuring Lumen Maintenance of LED Light Sources", 2008.
Y. Deshayes, L. Bechou, F. Verdier, and Y. Danto, "Long-term Reliability Prediction of 935nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests", Quality and Reliability Engineering International, vol. 21, pp. 571-594, 2005.
L. Trevisanello, M. Meneghini, G. Mura, M. Vanzi, M. Pavesi, G. Meneghesso, and E. Zanoni, "Accelerated Life Test of High Brightness Light Emitting Diodes", IEEE Transactions on Device and Materials Reliability, vol. 8, no. 2, pp. 304-311, 2008.
Y. Deshayes, I. Bord, G. Barreau, M. Aiche, P. H. Moretto, L. Bechou, A.C. Roehrig, and Y. Ousten, "Selective Activation of Failure Mechanisms in Packaged Double-Heterostructure Light Emitting Diodes Using Controlled Neutron Energy Irradiation", Microelectronics Reliability, vol. 48, pp. 1354-1360, 2008.
Nichia, "Specifications for Nichia Chip Type White LED Model: NCSW119T-H3", Nichia STS-DA1-0990A, Nichia Corporation, 2009.
J. -S. Jeong, J. -K. Jung, and S. -D. Park, "Reliability Improvement of InGaN LED Backlight Module by Accelerated Life Test (ALT) and Screen Policy of Potential Leakage LED", Microelectronics Reliability, vol. 48, pp. 1216-1220, 2008.
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C. -Y. Peng and S. -T. Tseng, "Mis-Specification Analysis of Linear Degradation Models", IEEE Transactions on Reliability, vol. 58, no. 3, pp. 444-455, 2009.
M. Vazquez, N. Nunez, E. Nogueira, and A. Borreguero, "Degradation of AlInGaP Red LEDs under Drive Current and Temperature Accelerated Life Tests", Microelectronics Reliability, vol. 50, pp. 1559-1562, 2010.
C. J. M. Lasance, "Recent Progress in Compact Thermal Models", 19th IEEE SEMI-THERM Symposium, pp. 290-299, 2003.
N. Hwang, "Failure Analysis Matrix of Light Emitting diodes for General Lighting Applications", Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium, pp. 1-4, 2008.
Q. Hu and R. Zane, "LED Drive Circuit with Series Input Connected Converter Cells Operating in Continuous Conduction Mode", Applied Power Electronics Conference and Exposition, 2009. APEC 2009. Twenty-Fourth Annual IEEE, pp. 1511-1517, 2009.
A. Christensen and S. Graham, "Thermal Effects in Packaging High Power Light Emitting Diode Arrays", Applied Thermal Engineering, vol. 29, pp. 364-371, 2009.
Q. Li and D. B. Kececioglu, "Design of an Optimal Plan for an Accelerated Degradation Test: A Case Study", International Journal of Quality & Reliability Management", vol. 23, no. 4, pp. 426-440, 2006.
E. Nogueira, M. Vazquez, and N. Nunez, "Evaluation of AlGaInP LEDs Reliability Based on Accelerated Tests", Microelectronics Reliability, vol. 49, pp. 1240-1243, 2009.
J. -M. Kang, J. -W. Kim, J. -H. Choi, D. -H. Kim, and H. -K. Kwon, "Life-Time Estimation of High-Power Blue Light-Emitting Diode Chips", Microelectronics Reliability, vol. 49, pp. 1231-1235, 2009.
T. Cheng, X. Luo, S. Huang, and S. Liu, "Thermal Analysis and Optimization of Multiple LED Packaging Based on a General Analytical Solution", International Journal of Thermal Sciences, vol. 49, pp. 196-201, 2010.
G. Molnar, G. Nagy, and Z. Szucs, "A Novel Procedure and Device to Allow Comprehensive Characterization of Power LEDs over a Wide Range of Temperature", TERMINIC 2008, Rome, Italy, pp. 89-92, Sep. 2008.
V. Szekely, G. Somlay, P. G. Szabo, and M. Rencz, "Design of a Static TIM Tester", THERMINIC 2008, Rome, Italy, pp. 132-136, Sep. 2008.
R. Linderman, T. Brunschwiler, B. Smith, and B. Michel, "High-Performance Thermal Interface Technology Overviews", THERMINIC 2007, 13th International Workshop on, Budapest, Hungary, pp. 129-134, Sep. 2007.
R. -H. Horng, H. -Y. Hsiao, C. -C. Chiang, D. -S. Wuu, Y. -L. Tsai, and H. -I. Lin, "Novel Device Design for High-Power InGaN/Sapphire LEDs using Copper Heat Spreader With Reflector", IEEE Journal of Selected Topics in Quantum Electronics, vol. 15, no. 4, 2009.
J. H. Yu, W. Oepts, and H. Konijn, "PC Board Thermal Management of High Power LEDs", Semiconductor Thermal Measurement and Management Symposium, 2008. Semi-Therm 2008. Twenty-fourth Annual IEEE, pp. 63-67, 2008.
H. Chang and Y. -S. Lai, "Novel AC Driver and Protection Circuits with Dimming Control for Light Emitting Diodes", Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE, pp. 696-700, 2007.
G. Cassanelli, G. Mura, F. Fantini, and M. Vanzi, "Failure Analysis of High Power White LEDs", Microelectronics, 2008. MIEL 2008. 26th International Conference, pp. 255-257, 2008.
M. Doshi and R. Zane, "Reconfigurable and Fault Tolerant Digital Phase Shifted Modulator for Luminance Control of LED Light Sources", Power Electronics Specialists Conference, 2008. PESC 2008. IEEE, pp. 4185-4191, 2008.
Q. Hu and R. Zane, "LED Drive Circuit With Series Input Connected Converter Cells Operating in Continuous Conduction Mode", "24th Annual IEEE Applied Power Electronics Conference and Exposition, 2009., pp. 1511-1517, 2009.
J. Patterson and R. Zane, "Series Input Modular Architecture for Driving Multiple LEDs", IEEE Power Electronics Specialists Conference, 2008., pp. 2650-2656, 2008.
K. Subramanian, "LED Color-Temperature Control", Electronic Design Online Conference Series, session 2, pp. 1-19, Jun 22nd, 2010.
C. Ice, "Digitally Controlled LED Lighting Systems", Electronic Design Online Conference Series, session 3, pp. 1-28, Jun 22nd, 2010.
J. Denicholas, "Using Analog Semiconductor Technologies in Solid State Lighting Applications", Electronic Design Online Conference Series, session 4, pp. 1-46, Jun 22nd, 2010.
E. F. Schubert, J. K. Kim, H. Luo, and J. -Q. Xi, "Solid-State Lighting-a Benevolent Technology", Reports on Progress in Physics, vol. 69, pp. 3069-3099, 2006

FAILURE MODES AND MECHANISMS IN LED’s

Defect and Dislocation generation and Movement

T. Yanagisawa, "The Degradation of GaAlAs Red Light-emitting Diodes under Continuous and Low-speed Pulse Operations", Microelectronics Reliability, vol. 38, pp. 1627-1630, 1998.
T. Hoang, P. LeMinh, J. Holleman, and J. Schmitz, "The Effect of Dislocation Loops on the Light Emission of Silicon LEDs", 35th European Solid-State Device Research Conference, 2005., pp. 359-362, 2005.
G. Lu, S. Yang, and Y. Huang, "Analysis on Failure Modes and Mechanisms of LED", Reliability, Maintainability and Safety, 2009. ICRMS 2009. 8th International Conference, pp. 1237-1241, 2009.
J. Tharian, "Degradation- and Failure Mode Analysis of III-V nitride Devices", Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium, pp. 284-287, 2007.
A. Uddin, A.C. Wei, and T.G. Andersson, "Study of Degradation Mechanism of Blue Light Emitting Diodes", Thin Solid Films, vol. 483, pp. 378-381, 2005.
T. Yanagisawa and T. Kojima, "Long-term Accelerated Current Operation of White Light-emitting Diodes", Journal of Luminescence, vol. 114, pp. 39-42, 2005.
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G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo, E. Zanoni, A. Cavallini, A. Castaldini, G. Scamarcio, S. Du, and I. Eliashevich, "Degradation Mechanisms of GaN-based LEDs after Accelerated DC current Aging", Electron Devices Meeting, 2002. IEDM ΄02. Digest. International, pp. 103-106, 2002.
M. Pavesi, F. Rossi, and E. Zanoni, "Effects of Extreme DC-ageing and Electron-beam Irradiation in InGaN/ AlGaN/ GaN Light-emitting Diodes", Semiconductor Science and Technology, vol. 21, pp. 138-143, 2006.
M. Ott, "Capabilities and Reliability of LEDs and Laser Diodes", International NASA Parts and Packaging Publication, pp. 1-7, 1996.
S. Chuang, A. Ishibashi, S. Kijima, N. Nakayama, M. Ukita, and S. Taniguchi, "Kinetic Model for Degradation of Light-Emitting Diodes", IEEE Journal of Quantum Electronics, vol. 33, No. 6, pp. 970-979, 1997.
J. M. Shah, Y. –L. Li, T. Gessmann, and E. F. Schubert, "Experimental Analysis and Theoretical Model for Anomalously High Ideal Factors (n»2.0) in AlGaN/GaN p-n Junction Diodes", Journal of Applied Physics, vol. 94, no. 4, pp. 2627-2630, 2003.
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L, Sugiura, "Dislocation Motion in GaN Light-emitting Devices and Its Effect on Device Lifetime", Journal of Applied Physics, vol. 81, no. 4, pp. 1633-1338, 1997.
O. Ueda, "Reliability Issues in III-V Compound Semiconductor Devices: Optical Devices and GaAs-based HBTs", Microelectronics Reliability, vol. 39, pp. 1839-1855, 1999.
M. Fukuda, "Laser and LED Reliability Update", Journal of Lightwave Technology, vol. 6, no. 10, pp. 1488-1495, 1988.
W. K. Wang, D. S. Wuu, S.H. Lin, S. Y. Huang, K.S. Wen, and R. H. Horng, "Growth and Characterization of InGaN-based Light-emitting Diodes on Patterned Sapphire Substrates", Journal of Physics and Chemistry of Solids, vol. 69, pp. 714-718, 2008.
G. Ferenczi, "Reliability of LED's; Are the Accelerated Ageing Tests Reliable?", Electrocomponent Science and Technology, vol. 9, pp. 239-242, 1982.
F. Rossi, M. Pavesi, M. Meneghini, G. Salviati, M. Manfredi, G. Meneghesso, A. Castaldini, A. Cavallini, L. Rigutti, U. Stress, U. Zehnder, and E. Zanoni, "Influence of Short-term Low Current DC Aging on the Electrical and Optical Properties of InGaN Blue Light-emitting Diodes", Journal of Applied Physics, vol. 99, pp. 053104-1-7, 2006.
J. Arnold, "When the Light Go Out: LED failure mode and mechanisms", DfR solutions, pp. 1-4, 2004.
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C. Pan, C. Lee, J. Liu, G. Chen, and J. Chyi, "Luminescence Efficiency of InGaN Multiple-quantum-well Ultraviolet Light-emitting Diodes", Applied Physics Letters, vol. 84, no. 25, pp. 5249-5251, 2004.
M. Pavesi, M. Manfredi, G. Salviati, N. Armani, F. Rossi, G. Meneghesso, S. Levada, and E. Zanoni, S. Du, and I. Eliashevich, "Optical Evidence of an Electrothermal Degradation of InGaN-based Light-emitting Diodes during Electrical Stress", Applied Physics Letters, vol. 84, no. 17, pp. 3403-3405, 2004.
M. Pavesi, M. Manfredi, F. Rossi, M. Meneghini, E. Zanoni, U. Zehnder, and U. Strauss, "Temperature Dependence of the Electrical Activity of Localized Defects in InGaN-based Light Emitting Diodes", Applied Physics Letters, vol. 89, pp. 041917-1-3, 2006.
X.A. Cao, P.M. Sandvik, S.F. LeBoeuf, and S.D. Arthur, "Defect Generation in InGaN/GaN Light-emitting Diodes under Forward and Reverse Electrical Stresses", Microelectronics Reliability, vol. 43, pp. 1987-1991, 2003.

Dopant Diffusion

S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, "Thermal Annealing Effects on p-type Mg-doped GaN films", Japanese journal of Applied Physics, vol. 31, pp. L139-L142, 1992.
B. A. Hull, S. E. Mohney, H. S. Venugopalan, and J. C. Ramer, "Influence of Oxygen on the Activation of p-type GaN", Applied Physics Letters, vol. 76, p. 2271-2273, 2000.
O. Brandt, H. Yang, H. Kostial, and K. H. Ploog, "High P-type Conductivity in Cubic GaN/GaAs (113)A by Using Be As the Acceptor and O As the Codopant", Applied Physics Letters, vol. 69, pp. 2707-2709, 1996.
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X. Zhang, S.-J, Chua, P. Li, K. -B. Chong, and W. Wang, "Improved Mg-doped GaN Films Grown Over a Multilayered Buffer", Applied Physics Letters, vol. 73, pp. 1772-1774, 2000.
D. -J. Kim, H. -M. Kim, M. -G. Han, Y. -T. Moon, S. Lee, and S. -J. Park, "Effects of KrF (248nm) Excimer Laser Irradiation on Electrical and Optical Properties of GaN:Mg", Journal of Vacuum Science and Technology B, vol. 21, pp. 641-644, 2003.
J. -S. Jang, S. -J. Park, and T. -Y. Seong, "Metallization Scheme for Highly Low-resistance, Transparent, and Thermally Stable Ohmic Contacts to P-GaN", Applied Physics Letters, vol. 76, pp. 2898-2900, 2000.
R. Khanna, L. Stafford, L. F. Voss, S. J. Pearton, H. T. Wang, T. Anderson, S. –C. Hung, and F. Ren, "Aging and Stability of GaN High Electron Mobility Transistors and Light-Emitting Diodes With TiB2- and Ir-Based Contacts", IEEE Transactions on Device and Materials Reliability, vol. 8, no. 2, pp. 272-276, 2008.
Q. -S. Zhu, H. Nagai, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki, "Effect of Thermal Annealing on Hole Trap Levels in Mg-doped GaN Grown by Metalorganic Vapor Phase Epitaxy", Journal of Vacuum Science& Technology A: Vacuum, Surfaces, and Films, vol. 18, no. 1, pp. 261-267, 2000.
K. Kohler, T. Stephan, A. Perona, J. Wiegert, M. Maier, M. Kunzer, and J. Wagner, "Control of the Mg Doping Profile in III-N Light-emitting Diodes and Its Effect on The Electroluminescence Efficiency", Journal of Applied Physics, vol. 97, pp. 104914-1-4, 2005.
M. -K. Kwon, I. -K. Park, J. -Y. Kim, J. -O. Kim, B. Kim, and S. -J. Park, "Gradient Doping of Mg in p-Type GaN for High Efficiency InGaN-GaN Ultraviolet Light-Emitting Diode", IEEE Photonics Technology Letters, vol. 19, no. 23, pp. 1880-1882, 2007.
P. Altieri-Weimar, A. Jaeger, T. Lutz, P. Stauss, K. Streubel, K. Thonke, and R. Sauer, "Influence of Doping on the Reliability of AlGaInP LEDs", Journal of Material Science: Materials in Electronics, vol. 19, pp. S338-S341, 2008.
G. Meneghesso, S. Levada, and E. Zanoni, "Failure Mechanisms of GaN-Based LEDs Related with Instabilities in Doping Profile and Deep Levels", IEEE Forty Second Annual International Reliability Physics Symposium, pp. 474-478, 2004.
M. Meneghini, L. –R. Trevisanello, S. Levada, G. Meneghesso, G. Tamiazzo, E. Zanoni, T. Zahner, U. Zehnder, V. Härle, and U. Strauβ, "Failure Mechanisms of Gallium Nitride LEDs Related with Passivation", Electron Devices meeting, 2005. IEDM Technical Digest. IEEE International, pp. 1009-1012, 2005.
M. Pavesi, M. Manfredi, G. Salviati, N. Armani, F. Rossi, G. Meneghesso, S. Levada, and E. Zanoni, S. Du, and I. Eliashevich, "Optical Evidence of an Electrothermal Degradation of InGaN-based Light-emitting Diodes during Electrical Stress", Applied Physics Letters, vol. 84, no. 17, pp. 3403-3405, 2004.

Electromigration

N. Hwang, P. S. R. Naidu, and A. Trigg, "Failure Analysis of Plastic Packaged Optocoupler Light Emitting Diodes", Electronics packaging Technology, 2003 5th conference (EPTC 2003), pp. 346-349, 2003.
H. Kim, H. Yang, C. Huh, S.-W. Kim, S. -J. Park, and H. Hwang, "Electromigration-induced Failure of GaN Multi-quantum Well Light Emitting Diode", Electronics Letters, vol. 36, pp. 908-910, 2000.
S. Haque, D. Steigerwald, S. Rudaz, B. Steward, J. Bhat, D. Collins, F. Wall, S. Subramanya, C. Elpedes, P. Elizondo, and P.S. Martin, "Packaging Challenges of High Power LEDs for Solid State Lighting", IMAPS Boston, MA, pp. 1-5, 2003.
D. L. Barton, J. Zeller, B. S. Phillips, P. -C. Chiu, S. Askar, D. -S. Lee, M. Osinski, and K. J. Malloy, "Degradation of Blue AlGaN/InGaN/GaN LEDs Subjected to High Current Pulses", Reliability Physics Symposium, 1995. 33rd Annual Proceedings, IEEE International, pp. 191-199, 1995.
D. L. Barton, M. Osinski, P. Perlin, P. G. Eliseev, and J. Lee, "Single-quantum Well InGaN Green Light Emitting Diode Degradation under High Electrical Stress", Microelectronics Reliability, vol.39, pp.1219-1227, 1999.
M. Ott, "Capabilities and Reliability of LEDs and Laser Diodes", International NASA Parts and Packaging Publication, pp. 1-7, 1996.
J. Arnold, "When the Light Go Out: LED failure mode and mechanisms", DfR solutions, pp. 1-4, 2004.

Electrical Contact Metallurgical Interdiffusion

M. Damann, A. Leuther, F. Benkhelifa, T. Feltgen, and W. Jantz, “Reliability and Degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs”, Physica Status Solidi (a), vol. 195, no. 1, pp. 81-86, 2003.
G. Meneghesso, C. Crosato, F. Garat, G. Martines, A. Paccagnella, and E. Zanoni, “Failure Mechanisms of Schottky Gate Contact Degradation and Deep Traps Creations in AlGaAs/InGaAs PM-HEMTs Submitted to Accelerated life Tests”, Microelectronics Reliability, vol. 38, pp. 1227-1232, 1998.
K. Mizuishi, H. Kurano, H. Sato, and H. Kodera, “Degradation mechanisms of GaAs MESFETs”, IEEE Transitions on Electron Devices, vol. ED-26, no. 7, pp. 1008-1014, 1979.
M. Meneghini, L. –R. Trevisanello, U. Zehnder, G. Meneghesso, and E. Zanoni, “Reversible Degradation of Ohmic Contacts on p-GaN for Application in High-Brightness LEDs”, IEEE Transactions on Electron Devices, vol. 54, no. 12, pp. 3245-3251, 2007.
G. Meneghesso, S. Levada, E. Zanoni, S. Podda, G. Mura, M. Vanzi, A. Cavallini, A. Castaldini, S. Du, and I. Eliashevich, “ Failure Modes and Mechanisms of DC-Aged GaN LEDs”, phys. stat. sol. (a), vol. 194, no. 2, pp. 389-392, 2002.
M. Pavesi, F. Rossi, and E. Zanoni, “Effects of Extreme DC-ageing and Electron-beam Irradiation in InGaN/ AlGaN/ GaN Light-emitting Diodes”, Semiconductor Science and Technology, vol. 21, pp. 138-143, 2006.
M. Pavesi, M. Manfredi, G. Salviati, N. Armani, F. Rossi, G. Meneghesso, S. Levada, and E. Zanoni, S. Du, and I. Eliashevich, “Optical Evidence of an Electrothermal Degradation of InGaN-based Light-emitting Diodes during Electrical Stress”, Applied Physics Letters, vol. 84, no. 17, pp. 3403-3405, 2004.

Electrostatic Discharge

P. Jacob, A. Kunz, and G. Nicoletti, “Reliability and Wearout Characterisation of LEDs”, Microelectronics Reliability, vol. 46, pp. 1711-1714, 2006.
S. J. Chang, C. H. Chen, Y. K. Su, J. K. Sheu, W. C. Lai, J. M. Tsai, C. H. Liu, and S. C. Chen, “Improved ESD Protection by Combining InGaN-GaN MQW LEDs with GaN Schottky Diodes”, IEEE Electron Device Letters, vol. 24, no. 3, pp. 129-131, 2003.
D. O’Mahony, W. Zimmerman, S. Steffen, J. Hilgarth, P. Maaskant, R. Ginige, L. Lewis, B. Lambert, and B. Corbett, “Free-Standing Gallium Nitride Schottky Diode Characteristics and Stability in a High-Temperature Environment”, Semiconductor Science and Technology, vol. 24, pp. 1-8, 2009.
S. –C. Shei, J. –K. Sheu, and C. –F. Shen, “Improved Reliability and ESD Characteristics of Flip-Chip GaN-Based LEDs with Internal Inverse-Parallel Protection Diodes”, IEEE Electron Device Letters, vol. 28, no. 5, pp. 346-349, 2007.
Y. K. Su, S. J. Chang, S. C. Wei, S. -M. Chen, and W. -L. Li, “ESD Engineering of Nitride-Based LEDs”, IEEE Transactions on Device and Materials Reliability, vol. 5, no. 2, pp. 277-281, 2005.
C. M. Tsai, J. K. Sheu, P. T. Wang, W. C. Lai, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo, and Y. K. Su, “High Efficiency and Improved ESD Characteristics of GaN-Based LEDs With Naturally Textured Surface Grown by MOCVD”, IEEE Photonics Technology Letters, vol. 18, no. 11, pp. 1213-1215, 2006.
J. -M. Zhang, D. -S. Zou, C. Xu, Y. -X. Zhu, T. Liang, X. -L. Da, and G. -D. Shen, “High Power and High Reliability GaN/ InGaN Flip-chip Light-emitting Diodes”, Chinese Physics, vol. 16, no. 4, pp. 1135-1139, 2007.
G. Meneghesso, A. Chini, A. Maschietto, E. Zanoni, P. Malberti, and M. Ciappa, “Electrostatic Discharge and Electrical Overstress on GaN/InGaN Light Emitting Diodes”, Electrical Overstress/Electrostatic Discharge Symposium, pp. 247-252, 2001.
T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo, Y. P. Hsu, W. C. Lai, and J. K. Sheu, “Improved ESD Reliability by Using a Modulation Doped Al0.12Ga0.88N/GaN Superlattice in Nitride-based LED”, Semiconductor Device Research Symposium, 2003 International, pp. 77-78, 2003.
P. McCluskey, K. Mensah, C. O'Connor, and F. Lilie, A. Gallo, and J. Pink, “Reliability of Commercial Plastic Encapsulated Microelectronics at Temperatures from 125˚C to 300˚C”, Proceedings of the Third European Conference on High Temperature Electronics; Proc. HITEN 1999, pp. 155-162, 1999.
P. McCluskey, K. Mensah, C. O'Connor, and A. Gallo, “Reliable Use of Commercial Technology in High Temperature Environments”, Microelectronics Reliability, vol. 40, pp. 1671-1678, 2000.
G. Meneghesso, S. Leveda, E. Zanoni, G. Scamarcio, G. Mura, S. Podda, M. Vanzi, S. Du, and I. Eliashevich, “Reliability of Visible GaN LEDs in Plastic Package”, Microelectronics Reliability, vol. 43, pp. 1737-1742, 2003.
M. Meneghini, L. Trevisanello, C. Sanna, G. Mura, M. Vanzi, G. Meneghesso, and E. Zanoni, “High Temperature Electro-Optical Degradation of InGaN/GaN HBLEDs”, Microelectronics Reliability, vol. 47, pp. 1625-1629, 2007.M. Meneghini, L. Trevisanello, C. Sanna, G. Mura, M. Vanzi, G. Meneghesso, and E. Zanoni, “High Temperature Electro-Optical Degradation of InGaN/GaN HBLEDs”, Microelectronics Reliability, vol. 47, pp. 1625-1629, 2007.
F. Wu, Y. Wu, B. An, and F. Wu, “Analysis of Dark Stain on Chip Surface of High-Power LED”, Electronic packaging Technology, 2006. ICEPT ’06. 7th International Conference, pp. 1-4, 2006.
L. Zhou, B. An, Y. Wu, and S. liu, “Analysis of Delamination and Darkening in High Power LED Packaging”, Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the Digital Object, pp. 656-660, 2009.
G. Lu, S. Yang, and Y. Huang, “Analysis on Failure Modes and Mechanisms of LED”, Reliability, Maintainability and Safety, 2009. ICRMS 2009. 8th International Conference, pp. 1237-1241, 2009.
Hewlett Packard, “Reliability of Precision Optical Performance AlInGaP LED Lamps in Traffic Signals and Variable Message Sings”, Application Brief I-004, 1997.
M. Damann, A. Leuther, F. Benkhelifa, T. Feltgen, and W. Jantz, “Reliability and Degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs”, Physica Status Solidi (a), vol. 195, no. 1, pp. 81-86, 2003.

Delamination

X. Luo, B. Wu, and S. Liu, “Effects of Moist Environments on LED Module Reliability”, IEEE Transactions on Device and Materials Reliability, vol. 10, no. 2, pp. 182-186, 2010.
A. Gladkov and A. Bar-Cohen, “Parametric Dependence of Fatigue of Electronic Adhesives”, Components and Packaging Technologies, IEEE Transactions on, vol. 22, pp. 200-208, 1999.
H. -H. Kim, S.-H. Choi, S.-H. Shin, Y.-K. Lee, S.-M. Choi, and S. Yi, “Thermal Transient Characteristics of Die Attach in High Power LED PKG”, Microelectronics Reliability, vol. 48, pp. 445-454, 2008.
J. Hu, L. Yang, and M.W. Shin, “Mechanisms and Thermal Effect of Delamination in Light-emitting Diode Packages”, Microelectronics Journal, vol. 38, pp. 157-163, 2007.
G. Mura, G. Cassanelli, F. Fantini, and M. Vanzi, “Sulfur-Contamination of High Power White LED”, Microelectronics Reliability, vol. 48, pp. 1208-1211, 2008.
E. H. Wong, K. C. Chan, R. Rajoo, and T. B. Lim, “The Mechanics and Impact of Hygroscopic Swelling of Polymeric Materials in Electronic Packaging”, ASME Journal of Electronic Packaging, vol. 124, no. 2, pp. 122-126, 2002.
L. Wang, S. Feng, C. Guo, and G. Zhang, “Analysis of Degradation of GaN-Based Light-Emitting Diodes”, Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium, pp. 472-475, 2009.
M. Rencz, V. Szekely, A. Morelli, and C. Villa, “Determining Partial Resistances with Transient Measurements, and Using the Method to Detect Die Attach Discontinuities”, Semiconductor Thermal Measurement, 2002. Eighteenth Annual IEEE Symposium, pp. 15-20, 2002.
J. Hu, L. Yang, and M.W. Shin, “Thermal and Mechanical Analysis of High-Power LEDs with Ceramic Packages”, IEEE Transactions on Device and Materials Reliability, vol. 8, no. 2, pp. 297-303, 2008.
M. Rencz, and V. Szekely, “Structure Function Evaluation of Stacked Dies”, Semiconductor Thermal Measurement and Management Symposium, 2004. Twentieth Annual IEEE, pp. 50-54, 2004.
J. Hu, L. Yang, and M. W. Shin, “Electrical, Optical, and Thermal Degradation of High Power GaN/InGaN Light-Emitting Diodes”, Journal of Physics D: Applied Physics, vol. 41, pp. 1-4, 2008.
G. Molnar, G. Nagy, and Z. Szücs, “A Novel Procedure and Device to Allow Comprehensive Characterization of Power LEDs over a Wide Range of Temperature”, THERMINIC 2008, Rome, Italy, pp. 89-92, 2008.
L. Tan, J. Li, K. Wang, and S. Liu, “Effects of Defects on the Thermal and Optical Performance of High-Brightness Light-Emitting Diodes”, IEEE Transactions on Electronics Packaging Manufacturing, vol. 32, no. 4, pp. 233-240, 2009.
J. H. Yu, G. Farkas, and Q. V. Vader, “Transient Thermal Analysis of Power LEDs at Package & Board Level”, THERMINIC 2005, Belgirate, Italy, pp. 244-248, Sep. 2005.
M. Arik and S. Weaver, “Effect of Chip and Bonding Defects on the Junction Temperatures of High-brightness Light-emitting Diodes”, Optical Engineering, vol. 44, no. 11, pp. 11305-1-8, 2005.
W. D. V. Driel, G. Wisse, A. Y. L. Chang, J. H. J. Jassen, X. Fan, K. G. O. Zhang, and L. J. Ernst, “Influence of Material Combinations on Delamination failures in a Cavity-Down TBGA Package”, IEEE Transactions on Components and Packaging Technologies, vol. 27, no. 4, pp. 651-658, 2004.
Y. Lin, N. Tran, Y. Zhou, Y. He, and F. Shi, “Materials Challenges and Solutions for the Packaging of High Power LEDs”, 2006 International Microsystems, Packaging, Assembly Conference Taiwan, IMPACT 2006. International, pp. 1-4, 2006.
Y.M. Noor, S.C. Tam, L.E.N. Lim, and S. Jana, “A Review of the Nd: YAG Laser Marking of Plastic and Ceramic IC Packages”, J. Mater. Process. Technol., vol. 42, no. 1, pp. 95-133, Apr. 1994.
B. Vandevelde, D. Degryse, E. Beyne, E. Roose, D. Corlatan, G. Swaelen, G. Willems, F. Christiaens, A. Bell, D. Vandepitte, and M. Baelmans, “Modified Micro-macro Thermo-mechanical Modeling of Ceramic Ball Grid Array Packages”, Microelectronics Reliability, vol. 43, no. 2, pp. 307-318, 2003.
Y. Aoyama and T. Yachi, “An LED Module Array System Designed for Streetlight Use”, Energy 2030 Conference, 2008. Energy 2008. IEEE, pp. 1-5, 2008.
Lumileds, “Luxeon Reliability”, Reliability Datasheet RD25, Philips Lumileds, 2006.
D. L. Barton, M. Osinski, P. Perlin, P. G. Eliseev, and J. Lee, “Single-quantum Well InGaN Green Light Emitting Diode Degradation under High Electrical Stress”, Microelectronics Reliability, vol.39, pp.1219-1227, 1999.
N.Y.A. Shammas, “Present Problems of Power Module Packaging Technology”, Microelectronics Reliability, vol. 43, pp. 519-527, 2003.

Encapsulant Yellowing

H. -T. Li, C. -W. Hsu, and K. -C. Chen, “The Study of Thermal Properties and Thermal Resistant Behaviors of Siloxane-modified LED Transparent Encapsulant”, Microsystems, Packaging, Assembly and Circuits Technology, 2007. IMPACT 2007. International, pp. 246-249, 2007.
A. Torikai and H. Hasegawa, “Accelerated Photodegradation of Poly(vinyl chloride)”, Polymer Degradation and Stability, vol. 63, pp. 441-445, 1999.
N. Narendran, Y. Gu, J. P. Freyssinier, H. Yu, and L. Deng, “Solid-state Lighting: Failure Analysis of White LEDs”, Journal of Crystal Growth, vol. 268, pp. 449-456, 2004.
J. L. Down, “The Yellowing of Epoxy Resin Adhesives: Report on High-Intensity Light Aging”, Studies in Conservation, vol. 31, pp. 159-170, 1986.
Q. Zhang, X. Mu, K. Wang, Z. Gan, X. Luo, and S. Liu, “Dynamic Mechanical Properties of the Transient Silicone Resin for High Power LED Packaging”, Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference, pp. 1-4, 2008.
M. Meneghini, L.-R. Trevisanello, G. Meneghesso, and E. Zanoni, “A Review on the Reliability of GaN-Based LEDs”, IEEE Transactions on Device and Materials Reliability, vol. 8, no. 2, pp. 323-331, 2008.
R. Baillot, Y. Deshayes, L. Bechou, T. Buffeteau, I. Pianet, C. Armand, F. Voillot, S. Sorieul, and Y. Ousten, “Effects of Silicone Coating Degradation on GaN MQW LEDs Performances using Physical and Chemical Analysis”, Microelectronics Reliability, vol. 50, pp. 1568-1573, 2010.
D. L. Barton and M. Osinski, “Degradation Mechanisms in GaN/ AlGaN/ InGaN LEDs and LDs”, Semiconducting and Insulating Materials, (SIMC-X) Proceedings of the 10th Conference on, pp. 259-262, 1998.
J. L. Down, “The Yellowing of Epoxy Resin Adhesives: Report on Natural Dark Aging”, Studies in Conservation, vol. 29, no. 2, pp. 63-76, 1984.
S. C. Allen and A. J. Steckl, “A Nearly Ideal Phosphor-converted White Light-emitting Diode”, Applied Physics Letters, vol. 92, pp. 143309-1-3, 2008.
N. T. Tran and F. G. Shi, “Simulation and Experimental Studies of Phosphor Concentration and Thickness for Phosphor-Based White Light-Emitting Diodes”, Microsystems, Packaging, Assembly and Circuits Technology, 2007. IMPACT International, pp. 255-257, 2007.
M. Arik, S. Weaver, C.A. Becker, M. Hsing, and A. Srivastava, “Effects of Localized Heat Generations Due to the Color Conversion in Phosphor Conversion in Phosphor Particles and Layers of High Brightness Light Emitting Diodes”, International Electronic Packaging Technical Conference and Exhibition, ASME, Maui, Hawaii, pp. 1-9, 2003.
N. Narendran, Y. Gu, J. P. Freyssinier-Nova, and Y. Zhu, “Extracting Phosphor-scattered Photons to Improve White LED Efficiency”, Physica Status Solidi (a), vol. 202, no. 6, pp. R60-R62, 2005.
J. K. Kim, H. Luo, E. F. Shubert, J. Cho, C. Sone, and Y. Park, “Strongly Enhanced Phosphor Efficiency in GaInN White Light-Emitting Diodes Using Remote Phosphor Configuration and Diffuse Reflector Cup”, Japanese Journal of Applied Physics, vol. 44, no. 21, pp. L649-L651, 2005.
H. Luo, J. K. Kim, E.F. Shubert, J. Cho, C. Sone, and Y. Park, “Analysis of High-power Packages for Phosphor-based White-light-emitting Diodes”, Applied Physics Letters, vol. 86, pp. 243505-1-3, 2005.
Y. -Q. Li, S. -Y. Fu, and Y. -W. Mai, “Preparation and Characterization of Transparent ZnO/epoxy Nanocomposites With High-UV Shielding Efficiency”, Polymer, vol. 47, pp. 2127-2132, 2006.
T. Yanagisawa and T. Kojima, “Long-term Accelerated Current Operation of White Light-emitting Diodes”, Journal of Luminescence, vol. 114, pp. 39-42, 2005.
G. Meneghesso, S. Leveda, E. Zanoni, G. Scamarcio, G. Mura, S. Podda, M. Vanzi, S. Du, and I. Eliashevich, “Reliability of Visible GaN LEDs in Plastic Package”, Microelectronics Reliability, vol. 43, pp. 1737-1742, 2003.

Lens Cracking

Y. -C Hsu, Y. -K. Lin, M. -H Chen, C. -C. Tsai, J. –H. Kuang, S. -B. Huang, H. –L. Hu, Y. Su, and W. -H. Cheng, “Failure Mechanisms Associated With Lens Shape of High-Power LED Modules in Aging Test”, IEEE Transactions on Electron Devices, vol. 55, no. 2, 2008.
B. M. Song and B. Han, “Reliability Guidelines of High Power LED”, 2008 CALCE EPS Consortium Report, project no. C08-26, pp. 1-11, 2008.
Hewlett Packard, “Reliability of Precision Optical Performance AlInGaP LED Lamps in Traffic Signals and Variable Message Sings”, Application Brief I-004, 1997.
T. Wipiejewski, T. Moriarty, V. Hung, P. Doyle, G. Duggan, D. Barrow, B. McGarvey, M. O’Gorman, T. Calvert, M. Maute, V. Gerhardt, J. D. Lambkin, “Gigabits in the Home with Plugless Plastic Optical Fiber (POF) Interconnects”, Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd, pp. 1263-1266, 2008.
Lumileds, “Luxeon Reliability”, Reliability Datasheet RD25, Philips Lumileds, 2006
M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting”, Journal of Display Technology, vol. 3, no. 2, pp. 160-175, 2007.
F. M. Steranka, J. Bhat, D. Collins, L. Cook, M. G. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach , S. Rudaz, Y. C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, "High Power LEDs - Technology Status and Market Applications," Physica Status Solidi (a), vol. 194, pp. 380-388, 2002.

Phosphor Thermal Quenching

M. Arik, A. Setlur, S. Weaver, D. Haitko, and J. Petroski, “Chip to System Levels Thermal Needs and Alternative Thermal Technologies for High Brightness LEDs”, Journal of Electronic Packaging, vol. 129, pp. 328-338, 2007.
R. -J. Xie and N. Hirosaki, “Silicon-based Oxynitride and Nitride Phosphors for White LEDs-A Review”, Science and Technology of Advanced Materials, vol. 8, pp. 588-600, 2007.
R. -J. Xie, N. Hirosaki, N. Kimura, K. Sakuma, and M. Mitomo, “2-phosphor-converted White Light-emitting Diodes Using Oxynitride/nitride Phosphors”, Applied Physics Letters, vol. 90, pp. 191101-1-3, 2007.
D. Jia, W. Jia, and Y. Jia, “Long Persistent Alkali-earth Silicate Phosphors Doped with Eu2+, ND3+”, Journal of Applied Physics, vol. 101, pp. 023520-1-6, 2007.
R. -J. Xie, N. Hirosaki, M. Mitomo, K. Takahashi, and K. Sakuma, “Highly Efficient White-light-emitting Diodes Fabricated with Short-wavelength Yellow Oxynitride Phosphors”, Applied Physics Letters, vol. 88, pp. 101104-1-3, 2006.
S. Nakamura, “Present Performance of InGaN-based Blue/green/yellow LEDs”, Proceedings of SPIE, vol. 3002, no. 26, pp. 26-35, 1997.
C. –C. Tsai, J. Wang, M. –H. Chen, Y. –C. Hsu, Y. –J. Lin, C. –W. Lee, S. –B. Huang, H. –L. Hu, and W. –H. Cheng, “Investigation of Ce:YAG Doping Effect on Thermal Aging for High-Power Phosphor-Converted White-Light-Emitting Diodes”, IEEE Transactions on Device and Material Reliability, vol. 9, no. 3, pp. 367-371, 2009.
Y. -S. Tang, S. -F. Hu, C. C. Lin, N. C. Bagkar, and R. -S. Liu, “Thermally Stable Luminescence of KSrPO4:Eu2+ Phosphor for White Light UV Light-emitting Diodes”, Applied Physics Letters, vol. 90, pp. 151108-1-3, 2007.
R. Mueller-Mach, G. O. Mueller, and M. R. Krames, “Phosphor Materials and Combinations for Illumination Grade White pcLED”, Proceedings of SPIE, vol. 5187, pp. 115-122, 2003.
R. Mueller-Mach, G. O. Mueller, M. R. Krames, and T. Trottier, “High-Power Phosphor-Converted Light-Emitting Diodes Based on III-Nitrides”, IEEE Journal on Selected Topics in Quantum Electronics, vol. 8, no. 2, pp. 339-345, 2002.
G. O. Mueller and R. Mueller-Mach, “White-light-emitting Diodes for Illumination”, Proceedings of SPIE, vol. 3938, no. 30, pp. 30-41, 2000.
R. Mueller-Mach, G. Mueller, M. R. Krames, H. A. Hoppe, F. Stadler, W. Schnick, T. Juestel, and P. Schmidt, “Highly Efficient All-nitride Phosphors-converted White Light Emitting Diode”, Physica Status Solidi (a), vol. 202, no. 9, pp. 1727-1732, 2005.
T. Uheda, N. Hirosaki, Y. Yamamoto, A. Naito, T. Nakajima, and H. Yamamoto, “ Luminescence Properties of a Red Phosphor, CaAlSiN3:Eu2+ , for White Light-Emitting Diodes”, Electrochemical and Solid-State Letters, vol. 9, no. 4, pp. H22-H25, 2006.
Y. Q. Li, J. E. J. van Steen, J. W. H. van Krevel, G. Botty, A. C. A. Delsing, F. J. Disalvo, G. de With, and H. T. Hintzen, “Luminescence Properties of Red-emitting M2Si5N8:Eu2+ (M=Ca, Sr, Ba) LED Conversion Phosphors”, Journal of Alloys and Compounds, vol. 417, pp. 273-279, 2006.
R. -J. Xie, N. Hirosaki, K. Sakuma, and N. Kimura, “White Light-emitting Diodes (LEDs) Using (oxy)nitride Phosphors”, Journal of Physics D: Applied Physics, vol. 41, pp. 144013-1-5, 2008.
R. -J. Xie, N. Hirosaki, T. Suehiro, F. -F Xu, and M. Mitomo, “A Simple, Efficient Synthetic Route to Sr2Si5N8:Eu2+ Based Red Phosphors for White Light-Emitting Diodes”, Chemistry of Materials, vol. 18, no. 23, pp. 5578-5583, 2006.
Q. Zeng, H. Tanno, K. Egoshi, N. Tanamachi, and S. Zhang, “Ba5SiO4Cl6:Eu2+: An Intense Blue Emission Phosphor under Vacuum Ultraviolet and Near-ultraviolet Excitation”, Applied Physics Letters, vol. 88, pp. 051906-1-3, 2006.
D. L. Barton, M. Osinski, P. Perlin, P. G. Eliseev, and J. Lee, “Single-quantum Well InGaN Green Light Emitting Diode Degradation under High Electrical Stress”, Microelectronics Reliability, vol.39, pp.1219-1227, 1999.

Solder Joint Fatigue

S. Misra and J. Kolbe, “Reliability of Thermal Management Substrates for LEDs”, Electronic Design Online Conference Series, session 1, pp. 1-27, Jun 22nd, 2010.
E. Hong and N. Narendran, “A Method for Projecting Useful Life of LED Lighting Systems”, Third International Conference on Solid State Lighting, Proceedings of SPIE 5187, pp. 93-99, 2004.
H. Qi, N. M. Vichare, M. H. Azarian, and M. Pecht, “Analysis of Solder Joint Failure Criteria and Measurement Techniques in the Qualification of Electronic Products”, IEEE Transactions on Components and Packaging Technologies, vol. 31, no. 2, pp. 469-477, 2008.
Guidelines for Accelerated Reliability Testing of Surface Mounting Solder Attachments, IPC-SM-785, The Institute for Interconnecting and Packaging Electronic Circuits, Northbrook, IL, Nov. 1992.
M. -H. Chang, D. Das, S. W. Lee, and M. Pecht, "Concerns with Interconnect Reliability Assessment of High Power Light Emitting Diodes (LEDs)", SMTA China South Technical Conference 2010, Shenzhen, China, pp. 63-69, Aug. 31st - Sep. 2nd, 2010.
A. Choubey, H. Yu, M. Osterman, M. Pecht, F. Yun, L. Yonghong, and X. Ming, “Intermetallics Characterization of Lead-Free Solder Joints under Isothermal Aging”, Journal of Electronic Materials, vol. 37, no. 8, pp. 1130-1138, 2008.
G. Y. Li and B. L. Chen, “Formation and Growth Kinetics of Interfacial Intermetallics in Pb-free Solder Joint”, IEEE Transactions on Components and Packaging Technologies, vol. 26, pp. 651-658, 2003.
M. Osterman and M. Pecht, “Strain Range Fatigue Life Assessment of Lead-free Solder Interconnects Subject to Temperature Cycle Loading”, Soldering & Surface Mount Technology, vol. 19, no. 2, pp. 12-17, 2007.
P. Chauhan, M. Osterman, and M. Pecht, “Critical Review of the Engelmaier Model for Solder Joint Creep Fatigue Reliability”, IEEE Transactions on Components and Packaging Technologies, vol. 32, no. 3, pp. 693-700, 2009.
E. George, D. Das, M. Osterman, M. Pecht, and C. Otte, “Physics of Failure Based Virtual Testing of Communications Hardware,” ASME International Mechanical Engineering Congress and Exposition (IMECE2009), Nov. 13-19, 2009, Buena Vista, Florida, U.S.A, pp. IMECE2009-12181-1-8, 2009.

CHALLENGES IN LED RELIABILITY ACHIEVEMENT DUE TO LACK OF THERMAL STANDARDIZATION

A. Bar-Cohen and A.D. Kraus, “Advances in Thermal Modeling of Electronic Components and Systems”, vol. 4, ASME Press, 1998.
S. Gao, J. Hong, S. Shin, Y. Lee, S. Choi, and S. Yi, “Design Optimization on the Heat Transfer and Mechanical Reliability of High Brightness Light Emitting Diodes (HBLED) Package”, Electronic Components and Technology Conference, 2008. ECTC 2008. 58th, pp. 798-803, 2008.
L. Jayasinghe, Y. Gu, and N. Narendran, “Characterization of Thermal Resistance Coefficient of High-Power LEDs”, 6th International Conference on Solid State Lighting, Proceedings of SPIE, pp. 1-10, 2006.
Y. Gu and N. Narendran, “A Non-contact Method for Determining Junction Temperature of Phosphor-converted White LEDs”, Third International Conference on Solid State Lighting, Proceedings of SPIE 5187, pp. 107-114, 2004.
J. Sanawiratne, W. Zhao, T. Detchprohm, A. Chatterjee, Y. Li, M. Zhu, Y. Xia, and J. L. Plawsky, “Junction Temperature Analysis in Green Light Emitting Diode Dies on Sapphire and GaN Substrates”, Physica Status Solidi (c), vol. 5, no. 6, pp. 2247-2249, 2008.
S. Chhajed, Y. Xi, Y. -L. Li, Th. Gessmann, and E. F. Schubert, “Influence of Junction Temperature on Chromaticity and Color-rendering Properties of Trichromatic White-light Sources Based on Light-emitting diodes”, Journal of Applied Physics, vol. 97, pp. 054506-1-8, 2005.
Z. Z. Chen, P. Liu, S. L. Qi, L. Lin, H. P. Pan, Z. X. Qin, T. J. Yu, Z. K. He, and G. Y. Zhang, “Junction Temperature and Reliability of High-Power Flip-Chip Light Emitting Diodes”, Materials Science in Semiconductor Processing, vol. 10, pp. 206-210, 2007.
J. Liu, W. S. Tam, H. Wong, and V. Filip, “Temperature-Dependent Light-Emitting Characteristics of InGaN/GaN Diodes”, Microelectronics Reliability, vol. 49, pp. 38-41, 2009.
L. –H. Peng, C. –W, Chuang, and L. –H, Lou, “Piezoelectric Effects in the Optical Properties of Strained InGaN Quantum Wells”, Applied Physics Letters, vol. 74, no. 6, pp.795-797, 1999.
H. C. Casey, Jr., J. Muth, S. Krishnankutty, and J. M. Zavada, “Dominance of Tunneling Current and Band Filling in InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes”, Applied Physics Letters, vol. 68, no. 20, pp. 2867-2869, 1996.
C. J. M. Lasance, and A. Poppe, “Challenges in LED Thermal Characterisation”, 10Th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009, pp. 1-11, Delft, 2009.
A. Poppe and C. J. M. Lasance, “On the Standardization of Thermal Characterization of LEDs”, 25th IEEE SEMI-THERM Symposium, pp. 1-8, 2009.
A. Poppe and C. J. M. Lasance, “On the Standardisation of Thermal Characterisation of LEDs Part II: Problem Definition and Potential Solutions”, THERMINIC 2008, Rome, Italy, pp. 213-219, 2008.
A. Poppe and C. J. M. Lasance, “Hot Topic for LEDs: Standardization Issues of Thermal Characterization”, Light and Lighting Conference with Special Emphasis on LEDs and Solid State Lighting, Budapest, Hungary, CIE, pp. 1-4, May, 2009.
A. Poppe, G. Molnár, and T. Temesvölgyi, “Temperature Dependent Thermal Resistance in Power LED Assemblies and a Way to Cope With It”, 26th IEEE SEMI-THERM Symposium, pp. 1-6, 2010.
C. J. M. Lasance, “Thermally Driven Reliability Issues in Microelectronic Systems: Status-Quo and Challenges”, Microelectronics Reliability, vol. 43, pp. 1969-1974, 2003.
Y. Joshi, K. Azar, D. Blackburn, C. J. M. Lasance, R. Mahajan, J. Rantala, “How well can we assess thermally driven reliability issues in electronic systems today? Summary of panel held at the Therminic 2002”, Microelectronics Journal, pp. 1195-1201, 2003.
C. J. M. Lasance, “Ten Years of Boundary-Condition-Independent Compact Thermal Modeling of Electronic Parts: A Review”, Heat Transfer Engineering, vol.29, pp.149-168, 2008
C. J. M. Lasance, “The Conceivable Accuracy of Experimental and Numerical Thermal Analyzes of Electronic Systems', IEEE CPT 25, pp. 366-382, 2002
C. J. M. Lasance, “The European Project PROFIT: Prediction of Temperature Gradients Influencing the Quality of Electronic Products”, Proc. 17th SEMI-THERM, pp. 120-125, 2001.